2

Isolation of silicon film grown on porous silicon layer

Year:
1983
Language:
english
File:
PDF, 502 KB
english, 1983
3

DOPING OF SILICON BY ION IMPLANTATION

Year:
1968
Language:
english
File:
PDF, 439 KB
english, 1968
7

Ga(AsP) light-emitting diode formed by ion implantation

Year:
1973
Language:
english
File:
PDF, 659 KB
english, 1973
11

Annealing effect for heavily Sn-implanted GaAs

Year:
1987
Language:
english
File:
PDF, 629 KB
english, 1987
12

Arsenic and Cadmium Implantations into n-Type Gallium Arsenide

Year:
1971
Language:
english
File:
PDF, 589 KB
english, 1971
13

Si film as an annealing cap for Si-implanted GaAs

Year:
1986
Language:
english
File:
PDF, 421 KB
english, 1986
14

Annealing behavior of unimplanted and zinc-implanted GaAs

Year:
1974
Language:
english
File:
PDF, 575 KB
english, 1974
17

TEMPERATURE DEPENDENCE OF RHS IN ALUMINUM-IMPLANTED LAYER IN n-TYPE SINGLE CRYSTAL SILICON

Year:
1969
Language:
english
File:
PDF, 447 KB
english, 1969
18

Photoconduction of the a-Si:H/a-C:H heterostructure

Year:
1987
Language:
english
File:
PDF, 590 KB
english, 1987
21

Zinc ion implantation into GaAs0.62P0.38

Year:
1974
Language:
english
File:
PDF, 472 KB
english, 1974
24

Epitaxial growth of silicon assisted by ion implantation

Year:
1971
Language:
english
File:
PDF, 319 KB
english, 1971
25

Sequence of a cDNA coding for human IRF-2

Year:
1989
Language:
english
File:
PDF, 63 KB
english, 1989